200M InGaAs APD Preamplifier Module

The CR200AH-1550-100M-00 includes a 200um InGaAs Avalanche Photodiode with a hybrid preamplifier for the use in high speed, ultra-low light detection, in laser range finding, LIDAR and free space communication.


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Features

● Built in 200um InGaAs+TIA

● High sensitivity：≥400kV/W

● High bandwidth：100Mhz

● Wavelength range:1100~1700nm

● Low noise and high reliability

● TO8 package with flat window

● Enhanced overload protection

Applications

● LIDAR

● Laser range finding

● Free space optical communication (FSO)

Related Products

800μm SI APD Preamplifier Module

500μm InGaAs APD Preamplifier Module

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Parameter	Symbol	Value			Unit	Test conditions
Parameter	Symbol	Min	Typ	Max	Unit	Test conditions
Response Spectrum	λ	1100~1700			nm
Active Diameter	D		200		um
Reverse breakdown voltage	VBR	30		70	V
Operating voltage	VR	VR-3			V	M=10
Responsivity	Rv	400			kV/W	M=10, 1.55um @τ=5ns
Dynamic range	DY	25			dB	M=10, 1.55um @τ=5ns
-3dB bandwidth	BW		100		Mhz	M=10, 1.55um @τ=100ns
Rise/Fall time	tr		3.5		ns	M=10, 1.55um @τ=100ns
Noise Equivalent Power	NEP		120		fW/√Hz	M=10 ， f=100kHz, △ =1hz
Output impedance	RO		50		Ω
Output Voltage Swing	VO	0.7			V
Positive Supply Current	ICC			30	mA
Negative Supply Current	IEE			10	mA	50Ω Load
Temperature coefficient of Vop for constant gain	γ	0.12			V/ o C	-45 ～ 85℃
Concentricity	△ D			20	um

Parameter	Symbol	Value			Unit	Test conditions
Parameter	Symbol	Min	Typ	Max	Unit	Test conditions
Response Spectrum	λ	1100~1700			nm
Active Diameter	D		200		um
Reverse breakdown voltage	VBR	30		70	V
Operating voltage	VR	VR-3			V	M=10
Responsivity	Rv	400			kV/W	M=10, 1.55um @τ=5ns
Dynamic range	DY	25			dB	M=10, 1.55um @τ=5ns
-3dB bandwidth	BW		100		Mhz	M=10, 1.55um @τ=100ns
Rise/Fall time	tr		3.5		ns	M=10, 1.55um @τ=100ns
Noise Equivalent Power	NEP		120		fW/√Hz	M=10 ， f=100kHz, △ =1hz
Output impedance	RO		50		Ω
Output Voltage Swing	VO	0.7			V
Positive Supply Current	ICC			30	mA
Negative Supply Current	IEE			10	mA	50Ω Load
Temperature coefficient of Vop for constant gain	γ	0.12			V/ o C	-45 ～ 85℃
Concentricity	△ D			20	um

200M InGaAs APD Preamplifier Module

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